Samsung and SK hynix will showcase their GDDR7 memory solutions at the upcoming International Solid-State Circuits Conference (ISSCC). The first generation of GDDR7 devices can operate at up to 32 GT/s, but both companies plan to discuss their advanced solutions with a data transfer rate of 42.5 GT/s.
Samsung’s 24Gb GDDR7 memory device is expected to deliver peak bandwidth of up to 170 GB/s. This device supports various enhancements that enable it to handle high-speed data transfers while maintaining predictable power consumption and reliability. Samsung implemented features such as low-power Write Clock distribution, resistance/capacitance-optimized dual-emphasis transmitter, and advanced voltage and time margin enhancements.
In contrast, SK hynix will focus on its 42 GT/s-capable single-ended PAM-3 receiver for GDDR7 memory interfaces. The key feature of this receiver is the single-ended hybrid decision feedback equalization (DFE), which ensures signal integrity even in high noise levels, crosstalk, and inter-symbol interference.
The single-ended hybrid DFE combines feed-forward equalizers (FFEs) and decision feedback equalizers (DFEs) to remove both linear and non-linear ISI. This technique is crucial for achieving predictable performance at high data transfer rates. Both Samsung and SK hynix plan to discuss their GDDR7 solutions at the ISSCC event, indicating a vision of achieving higher performance levels in the near future.
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Source: https://www.tomshardware.com/pc-components/gpus/samsung-and-sk-hynix-will-detail-gddr7-with-transfer-rates-up-to-42-5-gt-s-samsung-24gb-gddr7-expected-to-deliver-170-gb-s-of-peak-bandwidth